Vishay Siliconix

SI4618DY-T1-E3

Beschreibung :
MOSFET 2N-CH 30V 8A 8-SOIC
Paket :
8-SO
Current - Continuous Drain (Id) @ 25°C :
8A,15.2A
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Standard
FET Type :
2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs :
44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1535pF @ 15V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-SOIC (0.154",3.90mm Width)
Packaging :
-
Power - Max :
1.98W,4.16W
Rds On (Max) @ Id,Vgs :
17 mOhm @ 8A,10V
Series :
TrenchFET
Supplier Device Package :
8-SO
Vgs(th) (Max) @ Id :
2.5V @ 1mA

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