SI4618DY-T1-E3
- Beschreibung :
- MOSFET 2N-CH 30V 8A 8-SOIC
- Paket :
- 8-SO
- Dieser Teil ist RoHS-konform
- Datenblatt (1)
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- Current - Continuous Drain (Id) @ 25°C :
- 8A,15.2A
- Drain to Source Voltage (Vdss) :
- 30V
- FET Feature :
- Standard
- FET Type :
- 2 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1535pF @ 15V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-SOIC (0.154",3.90mm Width)
- Packaging :
- Cut Tape (CT)
- Power - Max :
- 1.98W,4.16W
- Rds On (Max) @ Id,Vgs :
- 17 mOhm @ 8A,10V
- Series :
- TrenchFET
- Supplier Device Package :
- 8-SO
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA