Package / Case:
Supplier Device Package:
Power - Max:
Current - Continuous Drain (Id) @ 25°C:
Rds On (Max) @ Id,Vgs:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Ausgewählte Bedingungen:
Entdecken Sie 7,106 -Produkte
Bild Teilenummer Hersteller Menge Lieferfrist Stückpreis Kaufen Beschreibung Packaging Series Operating Temperature Package / Case Supplier Device Package Mounting Type Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
FG6943010R
Panasonic Electronic Components
232,000
3 tage
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 0.1A SSMINI6
Tape & Reel (TR) - -40°C ~ 85°C (TJ) SOT-563,SOT-666 SSMini6-F3-B Surface Mount - N and P-Channel Standard 30V 100mA - - - -
FG6943010R
Panasonic Electronic Components
237,036
3 tage
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 0.1A SSMINI6
Cut Tape (CT) - -40°C ~ 85°C (TJ) SOT-563,SOT-666 SSMini6-F3-B Surface Mount - N and P-Channel Standard 30V 100mA - - - -
FG6943010R
Panasonic Electronic Components
237,036
3 tage
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 0.1A SSMINI6
- - -40°C ~ 85°C (TJ) SOT-563,SOT-666 SSMini6-F3-B Surface Mount - N and P-Channel Standard 30V 100mA - - - -
DMN3190LDW-7
Diodes Incorporated
51,000
3 tage
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 1A SOT363
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 6-TSSOP,SC-88,SOT-363 SOT-363 Surface Mount 320mW 2 N-Channel (Dual) Logic Level Gate 30V 1A 190 mOhm @ 1.3A,10V 2.8V @ 250μA 2nC @ 10V 87pF @ 20V
DMN3190LDW-7
Diodes Incorporated
51,910
3 tage
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 1A SOT363
Cut Tape (CT) - -55°C ~ 150°C (TJ) 6-TSSOP,SC-88,SOT-363 SOT-363 Surface Mount 320mW 2 N-Channel (Dual) Logic Level Gate 30V 1A 190 mOhm @ 1.3A,10V 2.8V @ 250μA 2nC @ 10V 87pF @ 20V
DMN3190LDW-7
Diodes Incorporated
51,910
3 tage
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 1A SOT363
- - -55°C ~ 150°C (TJ) 6-TSSOP,SC-88,SOT-363 SOT-363 Surface Mount 320mW 2 N-Channel (Dual) Logic Level Gate 30V 1A 190 mOhm @ 1.3A,10V 2.8V @ 250μA 2nC @ 10V 87pF @ 20V
DMG6601LVT-7
Diodes Incorporated
102,000
3 tage
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 26TSOT
Tape & Reel (TR) - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-26 Surface Mount 850mW N and P-Channel Logic Level Gate 30V 3.8A,2.5A 55 mOhm @ 3.4A,10V 1.5V @ 250μA 12.3nC @ 10V 422pF @ 15V
DMG6601LVT-7
Diodes Incorporated
103,348
3 tage
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 26TSOT
Cut Tape (CT) - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-26 Surface Mount 850mW N and P-Channel Logic Level Gate 30V 3.8A,2.5A 55 mOhm @ 3.4A,10V 1.5V @ 250μA 12.3nC @ 10V 422pF @ 15V
DMG6601LVT-7
Diodes Incorporated
103,348
3 tage
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 26TSOT
- - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-26 Surface Mount 850mW N and P-Channel Logic Level Gate 30V 3.8A,2.5A 55 mOhm @ 3.4A,10V 1.5V @ 250μA 12.3nC @ 10V 422pF @ 15V
BSD235CH6327XTSA1
Infineon Technologies
21,000
3 tage
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SOT363
Tape & Reel (TR) OptiMOS -55°C ~ 150°C (TJ) 6-VSSOP,SC-88,SOT-363 PG-SOT363-6 Surface Mount 500mW N and P-Channel Logic Level Gate 20V 950mA,530mA 350 mOhm @ 950mA,4.5V 1.2V @ 1.6μA 0.34nC @ 4.5V 47pF @ 10V
BSD235CH6327XTSA1
Infineon Technologies
22,363
3 tage
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SOT363
Cut Tape (CT) OptiMOS -55°C ~ 150°C (TJ) 6-VSSOP,SC-88,SOT-363 PG-SOT363-6 Surface Mount 500mW N and P-Channel Logic Level Gate 20V 950mA,530mA 350 mOhm @ 950mA,4.5V 1.2V @ 1.6μA 0.34nC @ 4.5V 47pF @ 10V
BSD235CH6327XTSA1
Infineon Technologies
22,363
3 tage
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SOT363
- OptiMOS -55°C ~ 150°C (TJ) 6-VSSOP,SC-88,SOT-363 PG-SOT363-6 Surface Mount 500mW N and P-Channel Logic Level Gate 20V 950mA,530mA 350 mOhm @ 950mA,4.5V 1.2V @ 1.6μA 0.34nC @ 4.5V 47pF @ 10V
DMC2038LVT-7
Diodes Incorporated
132,000
3 tage
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V TSOT26
Tape & Reel (TR) - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-26 Surface Mount 800mW N and P-Channel Logic Level Gate 20V 3.7A,2.6A 35 mOhm @ 4A,4.5V 1V @ 250μA 17nC @ 10V 530pF @ 10V
DMC2038LVT-7
Diodes Incorporated
134,544
3 tage
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V TSOT26
Cut Tape (CT) - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-26 Surface Mount 800mW N and P-Channel Logic Level Gate 20V 3.7A,2.6A 35 mOhm @ 4A,4.5V 1V @ 250μA 17nC @ 10V 530pF @ 10V
DMC2038LVT-7
Diodes Incorporated
134,544
3 tage
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V TSOT26
- - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-26 Surface Mount 800mW N and P-Channel Logic Level Gate 20V 3.7A,2.6A 35 mOhm @ 4A,4.5V 1V @ 250μA 17nC @ 10V 530pF @ 10V
DMG6602SVT-7
Diodes Incorporated
51,000
3 tage
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TSOT23-6
Tape & Reel (TR) - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-23-6 Surface Mount 840mW N and P-Channel Logic Level Gate 30V 3.4A,2.8A 60 mOhm @ 3.1A,10V 2.3V @ 250μA 13nC @ 10V 400pF @ 15V
DMG6602SVT-7
Diodes Incorporated
53,816
3 tage
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TSOT23-6
Cut Tape (CT) - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-23-6 Surface Mount 840mW N and P-Channel Logic Level Gate 30V 3.4A,2.8A 60 mOhm @ 3.1A,10V 2.3V @ 250μA 13nC @ 10V 400pF @ 15V
DMG6602SVT-7
Diodes Incorporated
53,816
3 tage
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TSOT23-6
- - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-23-6 Surface Mount 840mW N and P-Channel Logic Level Gate 30V 3.4A,2.8A 60 mOhm @ 3.1A,10V 2.3V @ 250μA 13nC @ 10V 400pF @ 15V
DMC2990UDJ-7
Diodes Incorporated
230,000
3 tage
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SOT963
Tape & Reel (TR) - -55°C ~ 150°C (TJ) SOT-963 SOT-963 Surface Mount 350mW N and P-Channel Logic Level Gate 20V 450mA,310mA 990 mOhm @ 100mA,4.5V 1V @ 250μA 0.5nC @ 4.5V 27.6pF @ 15V
DMC2990UDJ-7
Diodes Incorporated
240,748
3 tage
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SOT963
Cut Tape (CT) - -55°C ~ 150°C (TJ) SOT-963 SOT-963 Surface Mount 350mW N and P-Channel Logic Level Gate 20V 450mA,310mA 990 mOhm @ 100mA,4.5V 1V @ 250μA 0.5nC @ 4.5V 27.6pF @ 15V