ROHM Semiconductor

HP8KA1TB

Beschreibung :
MOSFET 2N-CH 30V 14A HSOP8
Paket :
8-HSOP
Current - Continuous Drain (Id) @ 25°C :
14A
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
2550pF @ 15V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
8-PowerTDFN
Packaging :
-
Power - Max :
3W
Rds On (Max) @ Id,Vgs :
5 mOhm @ 14A,10V
Series :
-
Supplier Device Package :
8-HSOP
Vgs(th) (Max) @ Id :
2.5V @ 10mA

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