ROHM Semiconductor

HP8K22TB

Beschreibung :
30V NCH NCH MID POWER MOSFET
Paket :
8-HSOP
Current - Continuous Drain (Id) @ 25°C :
27A,57A
Drain to Source Voltage (Vdss) :
30V
FET Feature :
-
FET Type :
2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs :
16.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1080pF @ 15V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-PowerTDFN
Packaging :
Cut Tape (CT)
Power - Max :
25W
Rds On (Max) @ Id,Vgs :
4.6 mOhm @ 20A,10V
Series :
-
Supplier Device Package :
8-HSOP
Vgs(th) (Max) @ Id :
2.5V @ 1mA

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