EFC6601R-TR

Current - Continuous Drain (Id) @ 25°C :

-

Drain to Source Voltage (Vdss) :

-

FET Feature :

Logic Level Gate，2.5V Drive

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

6-XFBGA，FCBGA

Packaging :

-

Power - Max :

2W

Rds On (Max) @ Id，Vgs :

-

Series :

-

Supplier Device Package :

EFCP2718-6CE-020

Vgs(th) (Max) @ Id :

-