Diodes Incorporated

DMN3190LDW-7

Beschreibung :
MOSFET 2N-CH 30V 1A SOT363
Paket :
SOT-363
Current - Continuous Drain (Id) @ 25°C :
1A
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
87pF @ 20V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
6-TSSOP,SC-88,SOT-363
Packaging :
-
Power - Max :
320mW
Rds On (Max) @ Id,Vgs :
190 mOhm @ 1.3A,10V
Series :
-
Supplier Device Package :
SOT-363
Vgs(th) (Max) @ Id :
2.8V @ 250μA

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