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ALD212900APAL
- Beschreibung :
- MOSFET 2N-CH 10.6V 0.08A 8DIP
- Paket :
- 8-PDIP
- Dieser Teil ist RoHS-konform
- Datenblatt (1)
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- Current - Continuous Drain (Id) @ 25°C :
- 80mA
- Drain to Source Voltage (Vdss) :
- 10.6V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual) Matched Pair
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 30pF @ 5V
- Mounting Type :
- Through Hole
- Operating Temperature :
- 0°C ~ 70°C (TJ)
- Package / Case :
- 8-DIP (0.300"，7.62mm)
- Packaging :
- Tube
- Power - Max :
- 500mW
- Rds On (Max) @ Id，Vgs :
- 14 Ohm
- Series :
- EPAD，Zero Threshold
- Supplier Device Package :
- 8-PDIP
- Vgs(th) (Max) @ Id :
- 10mV @ 20μA
