Vishay Semiconductor Diodes Division

GF1M-E3/67A

Beschreibung :
DIODE GEN PURP 1KV 1A DO214BA
Paket :
DO-214BA (GF1)
Capacitance @ Vr,F :
-
Current - Average Rectified (Io) :
1A
Current - Reverse Leakage @ Vr :
5μA @ 1000V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-65°C ~ 175°C
Package / Case :
DO-214BA
Packaging :
Tape & Reel (TR)
Reverse Recovery Time (trr) :
2μs
Series :
SUPERECTIFIER
Speed :
Standard Recovery >500ns,> 200mA (Io)
Supplier Device Package :
DO-214BA (GF1)
Voltage - DC Reverse (Vr) (Max) :
1000V
Voltage - Forward (Vf) (Max) @ If :
1.2V @ 1A

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