EMD62T2R
- Beschreibung :
- TRANS NPN/PNP PREBIAS 0.15W EMT6
- Paket :
- EMT6
- Dieser Teil ist RoHS-konform
- Datenblatt (1)
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- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 500nA
- DC Current Gain (hFE) (Min) @ Ic,Vce :
- 80 @ 5mA,10V
- Frequency - Transition :
- 250MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-563,SOT-666
- Packaging :
- Cut Tape (CT)
- Power - Max :
- 150mW
- Resistor - Base (R1) :
- 47 kOhms
- Resistor - Emitter Base (R2) :
- 47 kOhms
- Series :
- -
- Supplier Device Package :
- EMT6
- Transistor Type :
- 1 NPN,1 PNP - Pre-Biased (Dual)
- Vce Saturation (Max) @ Ib,Ic :
- 150mV @ 500μA,5mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V