ON Semiconductor

HGT1S10N120BNST

Beschreibung :
IGBT 1200V 35A 298W TO263AB
Paket :
TO-263AB
Current - Collector (Ic) (Max) :
35A
Current - Collector Pulsed (Icm) :
80A
Gate Charge :
100nC
IGBT Type :
NPT
Input Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-263-3,D2Pak (2 Leads + Tab),TO-263AB
Packaging :
Cut Tape (CT)
Power - Max :
298W
Reverse Recovery Time (trr) :
-
Series :
-
Supplier Device Package :
TO-263AB
Switching Energy :
320μJ (on),800μJ (off)
Td (on/off) @ 25°C :
23ns/165ns
Test Condition :
960V,10A,10 Ohm,15V
Vce(on) (Max) @ Vge,Ic :
2.7V @ 15V,10A
Voltage - Collector Emitter Breakdown (Max) :
1200V

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