GeneSiC Semiconductor

MBR400100CTR

Beschreibung :
DIODE MODULE 100V 400A 2TOWER
Paket :
Twin Tower
Current - Average Rectified (Io) (per Diode) :
400A (DC)
Current - Reverse Leakage @ Vr :
5mA @ 20V
Diode Configuration :
1 Pair Common Anode
Diode Type :
Schottky,Reverse Polarity
Mounting Type :
Chassis Mount
Operating Temperature - Junction :
-55°C ~ 150°C
Package / Case :
Twin Tower
Packaging :
Bulk
Reverse Recovery Time (trr) :
-
Series :
-
Speed :
Fast Recovery =< 500ns,> 200mA (Io)
Supplier Device Package :
Twin Tower
Voltage - DC Reverse (Vr) (Max) :
100V
Voltage - Forward (Vf) (Max) @ If :
840mV @ 200A

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