- Operating Temperature：
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- Package / Case：
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- Mounting Type：
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- Input Type：
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- Output Type：
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- Current - Output / Channel：
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- Rise / Fall Time (Typ)：
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- Voltage - Output (Max)：
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- Voltage - Isolation：
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- Voltage - Forward (Vf) (Typ)：
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- Current - DC Forward (If) (Max)：
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- Current Transfer Ratio (Min)：
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- Current Transfer Ratio (Max)：
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- Turn On / Turn Off Time (Typ)：
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- Vce Saturation (Max)：
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- Ausgewählte Bedingungen:
Entdecken Sie 1,135 -Produkte
 |
Bild | Teilenummer | Hersteller | Menge | Lieferfrist | Stückpreis | Kaufen | Beschreibung | Operating Temperature | Package / Case | Mounting Type | Input Type | Output Type | Current - Output / Channel | Rise / Fall Time (Typ) | Voltage - Output (Max) | Voltage - Isolation | Voltage - Forward (Vf) (Typ) | Current - DC Forward (If) (Max) | Current Transfer Ratio (Min) | Current Transfer Ratio (Max) | Turn On / Turn Off Time (Typ) | Vce Saturation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Bild | Teilenummer | Hersteller | Menge | Lieferfrist | Stückpreis | Kaufen | Beschreibung | Operating Temperature | Package / Case | Mounting Type | Input Type | Output Type | Current - Output / Channel | Rise / Fall Time (Typ) | Voltage - Output (Max) | Voltage - Isolation | Voltage - Forward (Vf) (Typ) | Current - DC Forward (If) (Max) | Current Transfer Ratio (Min) | Current Transfer Ratio (Max) | Turn On / Turn Off Time (Typ) | Vce Saturation (Max) | |
|
|
|
Lite-On Inc. |
44,064
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 3.55KV TRANS W/BASE 6DIP
|
-55°C ~ 100°C | 6-DIP (0.300"，7.62mm) | Through Hole | DC | Transistor with Base | 100mA | 3μs，3μs | 30V | 3550Vrms | 1.2V | 60mA | 100% @ 10mA | - | - | 300mV | ||
|
|
|
Lite-On Inc. |
30,375
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 2.5KV TRANS W/BASE 6DIP
|
-55°C ~ 100°C | 6-DIP (0.300"，7.62mm) | Through Hole | DC | Transistor with Base | 100mA | 3μs，3μs | 30V | 2500Vrms | 1.2V | 80mA | 20% @ 10mA | - | - | 500mV | ||
|
|
|
ON Semiconductor |
29,295
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV DARL W/BASE 6DIP
|
-40°C ~ 100°C | 6-DIP (0.300"，7.62mm) | Through Hole | DC | Darlington with Base | 150mA | - | 30V | 4170Vrms | 1.2V | 80mA | 500% @ 10mA | - | 5μs，100μs (Max) | 1V | ||
|
|
|
Lite-On Inc. |
10,953
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 1.5KV TRANS W/BASE 6DIP
|
-55°C ~ 100°C | 6-DIP (0.300"，7.62mm) | Through Hole | DC | Transistor with Base | 100mA | 3μs，3μs | 30V | 1500Vrms | 1.2V | 60mA | 100% @ 10mA | - | - | 300mV | ||
|
|
|
Lite-On Inc. |
10,228
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 1.5KV TRANS W/BASE 6DIP
|
-55°C ~ 100°C | 6-DIP (0.300"，7.62mm) | Through Hole | DC | Transistor with Base | 100mA | 3μs，3μs | 30V | 1500Vrms | 1.2V | 80mA | 20% @ 10mA | - | - | 500mV | ||
|
|
|
Lite-On Inc. |
3,998
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
OPTOISOLTR 5KV TRANSISTOR 6-DIP
|
-55°C ~ 100°C | 6-DIP (0.300"，7.62mm) | Through Hole | DC | Transistor | 150mA | 5μs，5μs | 70V | 5000Vrms | 1.45V | 60mA | 100% @ 10mA | 200% @ 10mA | - | 300mV | ||
|
|
|
Lite-On Inc. |
7,159
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 5KV TRANS W/BASE 6DIP
|
-55°C ~ 100°C | 6-DIP (0.300"，7.62mm) | Through Hole | DC | Transistor with Base | 150mA | 5μs，5μs | 70V | 5000Vrms | 1.45V | 60mA | 160% @ 10mA | 320% @ 10mA | - | 300mV | ||
|
|
|
Lite-On Inc. |
6,504
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 5KV TRANS W/BASE 6DIP
|
-55°C ~ 100°C | 6-DIP (0.300"，7.62mm) | Through Hole | DC | Transistor with Base | 150mA | 5μs，5μs | 70V | 5000Vrms | 1.45V | 60mA | 100% @ 10mA | 200% @ 10mA | - | 300mV | ||
|
|
|
Lite-On Inc. |
5,501
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 5KV TRANS W/BASE 6DIP
|
-55°C ~ 100°C | 6-DIP (0.300"，7.62mm) | Through Hole | DC | Transistor with Base | 150mA | 5μs，5μs | 70V | 5000Vrms | 1.45V | 60mA | 63% @ 10mA | 125% @ 10mA | - | 300mV | ||
|
|
|
Lite-On Inc. |
4,506
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 5KV TRANS W/BASE 6DIP
|
-55°C ~ 100°C | 6-DIP (0.300"，7.62mm) | Through Hole | DC | Transistor with Base | 150mA | 5μs，5μs | 70V | 5000Vrms | 1.45V | 60mA | 40% @ 10mA | 80% @ 10mA | - | 300mV | ||
|
|
|
Vishay Semiconductor Opto Division |
6,933
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 5KV TRANS W/BASE 6DIP
|
-55°C ~ 100°C | 6-DIP (0.300"，7.62mm) | Through Hole | DC | Transistor with Base | 50mA | - | 70V | 5000Vrms | 1.3V | 50mA | 100% @ 10mA | - | 10μs，10μs | - | ||
|
|
|
Vishay Semiconductor Opto Division |
6,448
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 5KV TRANS W/BASE 6DIP
|
-55°C ~ 100°C | 6-DIP (0.300"，7.62mm) | Through Hole | DC | Transistor with Base | 50mA | 2μs，2μs | 70V | 5000Vrms | 1.3V | 60mA | 20% @ 10mA | - | - | 500mV | ||
|
|
|
Vishay Semiconductor Opto Division |
5,182
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 5KV TRANS W/BASE 6DIP
|
-55°C ~ 100°C | 6-DIP (0.300"，7.62mm) | Through Hole | DC | Transistor with Base | 50mA | - | 30V | 5000Vrms | 1.3V | 50mA | 100% @ 10mA | - | 10μs，10μs | - | ||
|
|
|
Vishay Semiconductor Opto Division |
1,998
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 5KV TRANS W/BASE 6DIP
|
-55°C ~ 100°C | 6-DIP (0.300"，7.62mm) | Through Hole | DC | Transistor with Base | 50mA | 2μs，2μs | 70V | 5000Vrms | 1.3V | 60mA | 20% @ 10mA | - | - | 500mV | ||
|
|
|
Vishay Semiconductor Opto Division |
1,854
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 5KV TRANS W/BASE 6DIP
|
-55°C ~ 100°C | 6-DIP (0.300"，7.62mm) | Through Hole | DC | Transistor with Base | 50mA | - | 30V | 5000Vrms | 1.3V | 50mA | 100% @ 10mA | - | 10μs，10μs | - | ||
|
|
|
Vishay Semiconductor Opto Division |
1,415
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 5KV TRANS W/BASE 6DIP
|
-55°C ~ 100°C | 6-DIP (0.300"，7.62mm) | Through Hole | DC | Transistor with Base | 50mA | 2μs，2μs | 70V | 5000Vrms | 1.3V | 60mA | 10% @ 10mA | - | - | 500mV | ||
|
|
|
Vishay Semiconductor Opto Division |
5,419
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 5.3KV DARL W/BASE 6DIP
|
-55°C ~ 100°C | 6-DIP (0.300"，7.62mm) | Through Hole | DC | Darlington with Base | 100mA | - | 30V | 5300Vrms | 1.25V | 60mA | 500% @ 10mA | - | 5μs，100μs (Max) | 1V (Typ) | ||
|
|
|
Vishay Semiconductor Opto Division |
1,773
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 5.3KV DARL W/BASE 6DIP
|
-55°C ~ 100°C | 6-DIP (0.300"，7.62mm) | Through Hole | DC | Darlington with Base | 100mA | - | 30V | 5300Vrms | 1.25V | 60mA | 500% @ 10mA | - | 5μs，100μs (Max) | 1V (Typ) | ||
|
|
|
ON Semiconductor |
11,124
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV TRANS W/BASE 6DIP
|
-40°C ~ 100°C | 6-DIP (0.300"，7.62mm) | Through Hole | DC | Transistor with Base | - | - | 30V | 4170Vrms | 1.18V | 60mA | 20% @ 10mA | - | 2μs，2μs | 500mV | ||
|
|
|
ON Semiconductor |
9,143
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV TRANS W/BASE 6DIP
|
-40°C ~ 100°C | 6-DIP (0.300"，7.62mm) | Through Hole | DC | Transistor with Base | - | - | 30V | 4170Vrms | 1.18V | 60mA | 100% @ 10mA | - | 2μs，2μs | 300mV |
