- Hersteller：
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- Packaging：
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- Package / Case：
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- Supplier Device Package：
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- Voltage - Rated：
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- Frequency：
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- Current Rating：
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- Power - Output：
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- Transistor Type：
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- Gain：
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- Voltage - Test：
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- Noise Figure：
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- Current - Test：
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- Ausgewählte Bedingungen:
Entdecken Sie 3,719 -Produkte
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Bild | Teilenummer | Hersteller | Menge | Lieferfrist | Stückpreis | Kaufen | Beschreibung | Packaging | Series | Package / Case | Supplier Device Package | Voltage - Rated | Frequency | Current Rating | Power - Output | Transistor Type | Gain | Voltage - Test | Noise Figure | Current - Test | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Bild | Teilenummer | Hersteller | Menge | Lieferfrist | Stückpreis | Kaufen | Beschreibung | Packaging | Series | Package / Case | Supplier Device Package | Voltage - Rated | Frequency | Current Rating | Power - Output | Transistor Type | Gain | Voltage - Test | Noise Figure | Current - Test | |
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CEL |
10,000
|
3 tage |
-
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MOQ: 1 MPQ: 1
|
RF FET 4V 12GHZ 4MICROX
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Tape & Reel (TR) | - | 4-Micro-X | 4-Micro-X | 4V | 12GHz | 15mA | 125mW | pHEMT FET | 13.7dB | 2V | 0.5dB | 10mA | ||
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CEL |
14,309
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
RF FET 4V 12GHZ 4MICROX
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Cut Tape (CT) | - | 4-Micro-X | 4-Micro-X | 4V | 12GHz | 15mA | 125mW | pHEMT FET | 13.7dB | 2V | 0.5dB | 10mA | ||
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CEL |
14,309
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
RF FET 4V 12GHZ 4MICROX
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- | - | 4-Micro-X | 4-Micro-X | 4V | 12GHz | 15mA | 125mW | pHEMT FET | 13.7dB | 2V | 0.5dB | 10mA | ||
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Ampleon USA Inc. |
1,000
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
RF FET LDMOS 65V 16DB 12VDFN
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Tape & Reel (TR) | - | 12-VDFN Exposed Pad | 12-HVSON (6x4) | 65V | 2.14GHz | - | 2W | LDMOS (Dual)，Common Source | 16dB | 28V | - | 110mA | ||
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Ampleon USA Inc. |
1,369
|
3 tage |
-
|
MOQ: 1 MPQ: 1
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RF FET LDMOS 65V 16DB 12VDFN
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Cut Tape (CT) | - | 12-VDFN Exposed Pad | 12-HVSON (6x4) | 65V | 2.14GHz | - | 2W | LDMOS (Dual)，Common Source | 16dB | 28V | - | 110mA | ||
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Ampleon USA Inc. |
1,369
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
RF FET LDMOS 65V 16DB 12VDFN
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- | - | 12-VDFN Exposed Pad | 12-HVSON (6x4) | 65V | 2.14GHz | - | 2W | LDMOS (Dual)，Common Source | 16dB | 28V | - | 110mA | ||
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M/A-Com Technology Solutions |
1,126
|
3 tage |
-
|
MOQ: 1 MPQ: 1
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HEMT N-CH 28V 5W DC-6GHZ 8SOIC
|
Tube | - | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | 100V | 0Hz ~ 6GHz | 1.4A | 4W | HEMT | 14.8dB | 28V | - | 50mA | ||
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Ampleon USA Inc. |
180
|
3 tage |
-
|
MOQ: 1 MPQ: 1
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RF FET LDMOS 104V 22DB 12VDFN
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Tape & Reel (TR) | - | 12-VDFN Exposed Pad | 12-HVSON (6x4) | 104V | 860MHz | - | 5W | LDMOS (Dual)，Common Source | 22.4dB | 50V | - | 30mA | ||
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Ampleon USA Inc. |
220
|
3 tage |
-
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MOQ: 1 MPQ: 1
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RF FET LDMOS 104V 22DB 12VDFN
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Cut Tape (CT) | - | 12-VDFN Exposed Pad | 12-HVSON (6x4) | 104V | 860MHz | - | 5W | LDMOS (Dual)，Common Source | 22.4dB | 50V | - | 30mA | ||
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Ampleon USA Inc. |
220
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
RF FET LDMOS 104V 22DB 12VDFN
|
- | - | 12-VDFN Exposed Pad | 12-HVSON (6x4) | 104V | 860MHz | - | 5W | LDMOS (Dual)，Common Source | 22.4dB | 50V | - | 30mA | ||
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STMicroelectronics |
363
|
3 tage |
-
|
MOQ: 1 MPQ: 1
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TRANS RF PWR N-CH POWERSO-10RF
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Tube | - | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | PowerSO-10RF (Formed Lead) | 40V | 2GHz | 7A | 15W | LDMOS | 11dB | 13.6V | - | 350mA | ||
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Cree/Wolfspeed |
350
|
3 tage |
-
|
MOQ: 1 MPQ: 1
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RF MOSFET HEMT 28V DIE
|
Tray | GaN | Die | Die | 84V | 6GHz | - | 8W | HEMT | 15dB | 28V | - | 100mA | ||
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|
|
Ampleon USA Inc. |
1,200
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
RF FET LDMOS 104V 22DB 12VDFN
|
Tape & Reel (TR) | - | 12-VDFN Exposed Pad | 12-HVSON (6x5) | 104V | 860MHz | - | 10W | LDMOS (Dual)，Common Source | 22dB | 50V | - | 60mA | ||
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Ampleon USA Inc. |
1,256
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
RF FET LDMOS 104V 22DB 12VDFN
|
Cut Tape (CT) | - | 12-VDFN Exposed Pad | 12-HVSON (6x5) | 104V | 860MHz | - | 10W | LDMOS (Dual)，Common Source | 22dB | 50V | - | 60mA | ||
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|
|
Ampleon USA Inc. |
1,256
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
RF FET LDMOS 104V 22DB 12VDFN
|
- | - | 12-VDFN Exposed Pad | 12-HVSON (6x5) | 104V | 860MHz | - | 10W | LDMOS (Dual)，Common Source | 22dB | 50V | - | 60mA | ||
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Cree/Wolfspeed |
800
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
FET RF 84V 6GHZ 6QFN
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Tape & Reel (TR) | GaN | 6-VDFN Exposed Pad | 6-QFN-EP (3x3) | 84V | 0Hz ~ 6GHz | - | 8W | HEMT | 12dB | 28V | - | 100mA | ||
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|
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Cree/Wolfspeed |
1,344
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
FET RF 84V 6GHZ 6QFN
|
Cut Tape (CT) | GaN | 6-VDFN Exposed Pad | 6-QFN-EP (3x3) | 84V | 0Hz ~ 6GHz | - | 8W | HEMT | 12dB | 28V | - | 100mA | ||
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Cree/Wolfspeed |
1,344
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
FET RF 84V 6GHZ 6QFN
|
- | GaN | 6-VDFN Exposed Pad | 6-QFN-EP (3x3) | 84V | 0Hz ~ 6GHz | - | 8W | HEMT | 12dB | 28V | - | 100mA | ||
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Ampleon USA Inc. |
Anfrage
|
- |
-
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MOQ: 1 MPQ: 1
|
RF FET LDMOS 65V 18.5DB SOT538A
|
Tape & Reel (TR) | - | SOT-538A | 2-CSMD | 65V | 2.11GHz ~ 2.17GHz | - | 700mW | LDMOS | 18.5dB | 28V | - | 100mA | ||
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Ampleon USA Inc. |
458
|
3 tage |
-
|
MOQ: 1 MPQ: 1
|
RF FET LDMOS 65V 18.5DB SOT538A
|
Tray | - | SOT-538A | 2-CSMD | 65V | 2.11GHz ~ 2.17GHz | - | 700mW | LDMOS | 18.5dB | 28V | - | 100mA |
